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600V 8A APT8DQ60KCT APT8DQ60KCTG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
* Anti-Parallel Diode -Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters -Inverters * Snubber Diode * PFC
(KCT)
TO
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular TO-220 Package * Low Forward Voltage * Low Leakage Current * Avalanche Energy Rated
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power Density
1 2 3
-22
0
1 2
3
1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2
MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
All Ratings Per Leg: TC = 25C unless otherwise specified.
APT8DQ60KCT(G) UNIT
600
Volts
Maximum Average Forward Current (TC = 128C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec.
8 16 110 20 -55 to 175 300
mJ C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 8A VF Forward Voltage IF = 16A IF = 8A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V VR = 600V VR = 600V, TJ = 125C MIN TYP MAX UNIT
2.0 2.5 1.5
2.4
Volts
25 500 16
Microsemi Website - http://www.microsemi.com
053-4211 Rev E
pF
7-2006
A
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 8A, diF/dt = -1000A/s VR = 400V, TC = 125C IF = 8A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 8A, diF/dt = -200A/s VR = 400V, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN TYP
APT8DQ60KCT(G)
MAX UNIT ns nC
14 19 17 2 90 160 3 43 250 11 -
-
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance Package Weight MIN TYP MAX UNIT C/W oz g
2.7 0.07 1.9 10 1.1
lb*in N*m
Torque
Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
3.0 , THERMAL IMPEDANCE (C/W) 2.5 2.0 1.5 1.0 0.5 0 10-5 D = 0.9 0.7
0.5 0.3 0.1 0.05 10-4 SINGLE PULSE
Note:
PDM
t1 t2
JC
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
Z
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
TC (C)
1.93 0.773
7-2006
Dissipated Power (Watts) 0.00078 0.0246
053-4211 Rev E
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
30 25 trr, REVERSE RECOVERY TIME (ns)
120 100 80 60 40 20 0
APT8DQ60KCT(G)
T = 125C J V = 400V
R
16A
IF, FORWARD CURRENT (A)
TJ = 175C
20 15
8A 4A
TJ = 125C
10 5 0
TJ = 25C TJ = -55C
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 400 Qrr, REVERSE RECOVERY CHARGE (nC) 350 300 250 200 150 100 50 0
T = 125C J V = 400V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 14 12 10 8 6 4
T = 125C J V = 400V
R
16A
16A
8A
4A
8A 4A
2 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to X000A/s) 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 IRRM Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 20 18 16 14 IF(AV) (A) 12 10 8 6 4 2
Duty cycle = 0.5 T = 175C
J
trr trr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 60 CJ, JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
0
25
50
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
1
053-4211 Rev E
7-2006
APT8DQ60KCT(G)
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT6038BLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-220 (KCT) Package Outline
e3 100% Sn
1.39 (.055) 0.51 (.020)
Cathode
10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 6.85 (.270) 5.85 (.230)
16.51 (.650) 14.23 (.560)
3.42 (.135) 2.54 (.100)
4.08 (.161) Dia. 3.54 (.139)
6.35 (.250) MAX. 14.73 (.580) 12.70 (.500)
0.50 (.020) 0.41 (.016) 2.92 (.115) 2.04 (.080) 4.82 (.190) 3.56 (.140)
Anode Cathode Anode
1.77 (.070) 3-Plcs. 1.15 (.045)
7-2006
1.01 (.040) 3-Plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
053-4211 Rev E
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Dimensions in Millimeters and (Inches)

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